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FDP047N10 N-Channel PowerTrench(R) MOSFET
August 2010
FDP047N10
Description
N-Channel PowerTrench(R) MOSFET
100V, 164A, 4.7m General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor's advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
* RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handing capability * RoHS compliant
Application
* DC to DC converters / Synchronous Rectification
D
G
G DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG
.TL
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, Silicon Limited) Continuous (TC = 100oC, Silicon Limited) Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) - Derate above 25oC (TC = 25oC)
Ratings 100 20 164* 116* 120 656* 1153 4.5 375 2.5 -55 to +175 300
Units V V A A A A mJ V/ns W W/oC
o o
Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
. *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.4 0.5 62.5
o
Units C/W
(c)2010 Fairchild Semiconductor Corporation FDP047N10 Rev. B2
1
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDP047N10 Device FDP047N10 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V VDS = 100V, VGS = 0V 100 0.1 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A
(Note 4)
2.5 -
3.5 3.9 170
4.5 4.7 -
V m S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 11500 1120 455 15265 1500 680 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V, ID = 75A VGS = 10V
(Note 4, 5)
VDD = 50V, ID = 75A VGS = 10V, RGEN = 25
(Note 4, 5)
174 386 344 244 160 56 36
358 782 698 499 210 -
ns ns ns ns nC nC nC
-
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s
(Note 4)
-
88 245
164 656 1.25 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP047N10 Rev. B2
2
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
8V 10V 7V 6.5 V 6.0 V
Figure 2. Transfer Characteristics
400
ID,Drain Current[A]
ID,Drain Current[A]
100
100
175 C
o
-55 C 25 C
o
o
5.5 V
10
VGS = 5V *Notes: 1. 250s Pulse Test 2. TC = 25 C
o
10
6 0.1
1 VDS,Drain-Source Voltage[V]
5
1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
2
4 6 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
10
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
300
RDS(ON) [m], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
8
100
175 C 25 C
o o
6
VGS = 10V
4
VGS = 20V
10
*Notes: 1. VGS = 0V
2
*Note: TJ = 25 C
o
0
0
100 200 300 ID, Drain Current [A]
400
2 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
16000 14000 12000 Capacitances [pF] 10000 8000 6000 4000 2000 0 0.1
Crss Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 20V VDS = 50V VDS = 80V
8
6
4
2
*Note: ID = 75A
1 10 VDS, Drain-Source Voltage [V]
30
0
0
30
60 90 120 150 Qg, Total Gate Charge [nC]
180
FDP047N10 Rev. B2
3
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 75A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
100s 10s
Figure 10. Maximum Drain Current vs. Case Temperature
200
ID, Drain Current [A]
100
10
Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C
o
ID, Drain Current [A]
1ms 10ms DC
150
100
Limited by package
1
0.1
2. TJ = 175 C 3. Single Pulse
o
50
0.01 0.1
1 10 VDS, Drain-Source Voltage [V]
100 200
0 25
50
75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
o
0.01
0.02 0.01 Single pulse
*Notes: 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
1E-3 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDP047N10 Rev. B2
4
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP047N10 Rev. B2
5
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FDP047N10 Rev. B2
6
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FDP047N10 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
FDP047N10 Rev. B2
7
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FDP047N10 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFSTM Power-SPMTM (R)* AccuPowerTM FRFET(R) PowerTrench(R) Auto-SPMTM The Power Franchise(R) Global Power ResourceSM PowerXSTM Build it NowTM (R) Green FPSTM Programmable Active DroopTM CorePLUSTM Green FPSTM e-SeriesTM QFET(R) CorePOWERTM CROSSVOLTTM QSTM GmaxTM TinyBoostTM CTLTM GTOTM Quiet SeriesTM TinyBuckTM Current Transfer LogicTM IntelliMAXTM RapidConfigureTM TinyCalcTM TM DEUXPEED(R) ISOPLANARTM TinyLogic(R) Dual CoolTM MegaBuckTM TINYOPTOTM EcoSPARK(R) MICROCOUPLERTM Saving our world, 1mW/W/kW at a timeTM TinyPowerTM EfficentMaxTM MicroFETTM SignalWiseTM TinyPWMTM ESBCTM MicroPakTM SmartMaxTM TinyWireTM MicroPak2TM SMART STARTTM (R) TriFault DetectTM MillerDriveTM SPM(R) TRUECURRENTTM* (R) STEALTHTM MotionMaxTM Fairchild SerDesTM (R) SuperFETTM Motion-SPMTM Fairchild Semiconductor SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) FACT(R) UHC(R) OPTOPLANAR(R) SuperSOTTM-8 FAST(R) (R) Ultra FRFETTM SupreMOSTM FastvCoreTM UniFETTM SyncFETTM FETBenchTM VCXTM Sync-LockTM FlashWriter(R) * PDP SPMTM VisualMaxTM FPSTM XSTM
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition
Advance Information Preliminary No Identification Needed Obsolete
Formative / In Design First Production Full Production Not In Production
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I48
FDP047N10 Rev. B2
8
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